Enhanced adhesion by high energy bombardment

摘要: Films (12) of gold, copper, silicon nitride, or other materials are firmly bonded to insulator substrates such as silica, a ferrite, Teflon (polytetrafluorethylene) by irradiating the interface with high energy ions. Apparently, track forming processes in electronic stopping region cause intermixing thin surface layer resulting improved adhesion without excessive doping. Thick layers can be depositing doping interfacial surfaces fissionable elements alpha emitters.