Aerogel thin film formation from multi-solvent systems

摘要: This invention pertains generally to precursors and deposition methods suited aerogel thin film fabrication. An precursor sol which contains an oligomerized metal alkoxide (such as TEOS), a high vapor pressure solvent ethanol) low water 1-butanol) is disclosed. By method according the present invention, such applied semiconductor wafer, allowed evaporate while evaporation of limited, preferably by controlling atmosphere adjacent wafer. The reduced then gel at concentration determined ratio solvent. One advantage that it provides stable, spinnable for setting thickness providing good planarity gap fill patterned wafers. In addition, however, may be gelled rapidly from known keyed desired final density largely independent spin conditions.