作者: Tingxin Li , Pengjie Wang , Hailong Fu , Lingjie Du , Kate A. Schreiber
DOI: 10.1103/PHYSREVLETT.115.136804
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摘要: … In conclusion, in InAs=GaSb QSHI we observe a strong … vF of edge states) in InAs=GaSb materials can be engineered by … edge states in the InAs=GaSb system would be necessary to …