作者: Takanori Aoki , Tatsuhiko Matsushita , Akio Suzuki , Kenji Tanabe , Masahiro Okuda
DOI: 10.1116/1.1978891
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摘要: WO3 films were deposited on the glass substrate (Corning No. 7059 with an area of 26×38mm) by pulsed laser deposition method using ArF excimer laser. It was found that after annealing at 500°C for 10min, film thickness became 1.8 times compared (approximately 40nm) in as state. At this time, difference transmittance, ΔT, between annealed state and about 40% wavelength 400nm. From x-ray diffraction spectra photoelectron spectroscopy spectra, it considered ratio peak values W6+ 4f5∕2 (tungsten oxide) versus W (metal tungsten) increased steeply process. this, oxygen absorbed into through revolution test sample without protection layer which upon digital versatile disk substrate, a write peak-power dependence carrier to noise (CNR) (at λ=406nm, NA=0.65) 3T signal (58.5MHz) measured linear velocity 5m∕s read power 0.6mW. confirmed CNR obtained 5–6mW near 50dB (the region A) ones 7–10mW more than 60dB B). scanning electron microscopy observation, recognized bits 0.16–0.25μm size, having fine-shaped dots clear-cut edge, made A. This corresponded maximal storage capacity 25GB “Blu-ray disk” specification. However, also identified holes formed B materials scattered receiving train high impulses. Next, corresponding A structures sandwiched Al2O3 or ZnS–SiO2 decreased, respectively. Larger will be if each including active optimized.WO3 (C...