Excitonic molecules trapped by quantum dots and isoelectronic impurities in many-valley semiconductors

摘要: Excitonic molecules with two to six excitons trapped by quantum dots or isoelectronic impurity centers are studied theoretically and experimentally for the first time. Such excitonic can exist only in many-valley semiconductors. A model of an molecule, valid a large number valleys conduction valence bands, is examined. The formation kinetics discussed. material feature bound on existence tunneling transitions between dots.