The influence of isothermal annealing on tin oxide thin film for pH-ISFET sensor

摘要: Abstract The aim of this paper is to investigate pH sensitivity tin oxide thin films prepared by thermal evaporation, and the influences isothermal annealing on its characteristics. A series capacitance–voltage (C–V) curves SnO2/SiO2/Si electrolyte insulator semiconductor (EIS) diodes are used evaluate films. results show that (as grown) have linear sensitivities approximately 58 mV/pH in a concentration range between 2 10. However, decreases after processes at 300°C, 400°C, 500°C N2 ambiance for 1 h; goes further down only 33 mV/pH, 15 h. This phenomenon structure films, which will undergo phase transition from amorphous polycrystal process. Moreover, characteristics gate ion-sensitive field-effect transistor (ISFET) (SnO2/SiO2 ISFET), where formed under optimum condition, also presented paper.