As-doped p-type ZnO films by sputtering and thermal diffusion process
作者： Peng Wang , Nuofu Chen , Zhigang Yin , Fei Yang , Changtao Peng
DOI: 10.1063/1.2245192
关键词:
摘要: As-doped p-type ZnO films were grown on GaAs by sputtering and thermal diffusion process. Hall effect measurements showed that the as-grown of n-type conductivity they converted to behavior after annealing. Moreover, hole concentration was very impressible oxygen ambient applied during annealing In addition, bonding state As in investigated x-ray photoelectron spectroscopy. This study not only demonstrated an effective method for reliable reproducible fabrication but also helped understand doping mechanism ZnO.
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