Investigation of the parameters of layers prepared through diffusion of boron and gadolinium from silicate and hybrid films into silicon wafers

摘要: This paper reports on the results of investigations into main electrical parameters diffusion layers formed in silicon due to annealing films containing boron and gadolinium. The sources for gadolinium are silicate hybrid organic-inorganic prepared by sol-gel method. It is demonstrated that small amounts (0.5–2.0 wt %) organic additives, i.e., polyols with different structures molecular weights, favor formation highest possible concentration dopant at a level solubility limit (Ns = 5−7 × 1020 cm−3) layer depth ≥4 μm. determined use Irwin curves data obtained secondary ion mass spectrometry compared. coefficients calculated. These first time. revealed process retarded when introduced combination