Arrangement for plasma processing system control based on RF voltage
作者： Henry S. Povolny , John C. Valcore
DOI:
关键词:
摘要: An arrangement for controlling a plasma processing system is provided. The includes an RF sensing mechanism obtaining voltage signal. also probe coupled to the facilitate acquisition of signal while reducing perturbation power driving in system. further configured receiving signal, split signals into plurality channels, convert direct current (DC) signals, DC digital and process domain generate transfer function output. moreover ESC supply subsystem receive output as feedback control
google.com.au 参考文章(162)
Keith W. Golke, Thomas E. Hendrickson, Charles C. Huang, High sensitivity variable capacitance transducer ,(1982)
Francis G. Shinskey, Method and apparatus for statistical set point bias control ,(1987)
Charles Crapuchettes, Vladimir Nagorny, Valery A. Godyak, Inductive plasma source ,(2010)
Ken Tokashiki, Plasma etching method and apparatus thereof ,(2010)
Steven F. Bergeron, Bernard F. Duncan, Two step plasma etching ,(1981)
Willem van Gelder, Marek A. Sternheim, Interferometric method and apparatus for measuring etch rate and fabricating devices ,(1982)
Roland Gesche, Stefan Locher, Circuit configuration for the automatic tuning of a matching network ,(1989)
Christopher Paul Hancock, Microwave plasma sterilisation system and applicators therefor ,(2008)
Jeffrey Longacre, Ronald A. Jones, System and method for electronically collecting data in a fabrication facility ,(2003)