Effect of the dangling-bond charge on the ambipolar diffusion length in a-Si: H
作者： E. Sauvain , J. Hubin , A. Shah , P. Pipoz
DOI: 10.1080/09500839108206376
关键词:
摘要: Abstract The light intensity dependence of the photoconductivity (σph), ambipolar diffusion length (L amb) and ratio effective mobilities (b = μn∗/μp∗) has been measured on undoped a-Si: H. L amb b have using steady-state photocarrier grating (SSPG) method. kinetics light-induced degradation (Staebler-Wronski effect) a typical hydrogenated amorphous silicon (a-Si: H) film is presented: it illustrates that value varies in quite different manner with deep defect density σph. All these results can be explained by incorporating effect dangling-bond charge into model (used hitherto), included only trapped bandtails.
harvard.edu
sci-hub.se 参考文章(8)
Albert Rose, Concepts in photoconductivity and allied problems ,(1963)
I. Balberg, A.E. Delahoy, H. Weakliem, Light intensity dependence of the ambipolar diffusion-length in hydrogenated amorphous silicon (solar cells) photovoltaic specialists conference. pp. 352- 356 ,(1988) , 10.1109/PVSC.1988.105720
E. Sauvain, A. Shah, J. Hubin, Measurement of ambipolar mobility-lifetime product and its significance for amorphous silicon cells photovoltaic specialists conference. ,vol. 2, pp. 1560- 1563 ,(1990) , 10.1109/PVSC.1990.111870
J. Hubin, E. Sauvain, A.V. Shah, Characteristic lengths for steady-state transport in illuminated, intrinsic a-Si:H IEEE Transactions on Electron Devices. ,vol. 36, pp. 2789- 2797 ,(1989) , 10.1109/16.40939
D. Ritter, E. Zeldov, K. Weiser, Ambipolar transport in amorphous semiconductors in the lifetime and relaxation-time regimes investigated by the steady-state photocarrier grating technique. Physical Review B. ,vol. 38, pp. 8296- 8304 ,(1988) , 10.1103/PHYSREVB.38.8296
H. Curtins, N. Wyrsch, A.V. Shah, High-rate deposition of amorphous hydrogenated silicon: effect of plasma excitation frequency Electronics Letters. ,vol. 23, pp. 228- 230 ,(1987) , 10.1049/EL:19870160
D. Ritter, K. Weiser, E. Zeldov, Steady‐state photocarrier grating technique for diffusion‐length measurement in semiconductors: Theory and experimental results for amorphous silicon and semi‐insulating GaAs Journal of Applied Physics. ,vol. 62, pp. 4563- 4570 ,(1987) , 10.1063/1.339051
J.Z. Liu, X. Li, P. Roca i Cabarrocas, J.P. Conde, A. Maruyama, H. Park, S. Wagner, A.E. Delahoy, Ambipolar diffusion length in a-Si:H(F) and a-Si,Ge:H,F measured with the steady-state photocarrier grating technique photovoltaic specialists conference. pp. 1606- 1609 ,(1990) , 10.1109/PVSC.1990.111880