Photoconductivity in n-type beta -FeSi2 single crystals.
作者： E. Arushanov , E. Bucher , Ch. Kloc , O. Kulikova , L. Kulyuk
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摘要: Photoconductivity in \ensuremath{\beta}-${\mathrm{FeSi}}_{2}$ single crystals was observed the temperature range of 80--250 K. The energy gap, 0.89 eV at 85 K, and its dependence were determined. values average phonon energy, 55 meV, electron-phonon coupling parameter, S=2.75, evaluated. quenching photoconductivity is explained assuming two-center model. donor acceptor activation 70 120 respectively, as well hole mobility due to lattice scattering
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