Low threshold current density (760 A/cm/sup 2/) and high power (45 mW) operation of strained Ga/sub 0.42/In/sub 0.58/P multiquantum well laser diodes emitting at 632 nm
作者： A. Valster , C.J. van der Poel , M.N. Finke , M.J.B. Boermans
DOI: 10.1049/EL:19920089
关键词:
摘要: A record low threshold current density of 760 A/cm2 has been obtained for a compressively strained multiquantum well laser emitting at 632 nm. Narrow stripe gain guided lasers show maximum continuous output power 45 mW with normally passivated mirrors. Stable operation over more than 3000 h 40°C and 2 is reported the first time.
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sci-hub.st 参考文章(1)
H. Hamada, M. Shono, S. Honda, R. Hiroyama, K. Yodoshi, T. Yamaguchi, AlGaInP visible laser diodes grown on misoriented substrates IEEE Journal of Quantum Electronics. ,vol. 27, pp. 1483- 1490 ,(1991) , 10.1109/3.89967