Nonlinear intersubband absorption and refractive index change in n-type δ -doped GaAs for different donor distributions

摘要: In this study, both the linear and nonlinear intersubband optical absorption coefficients refractive index changes are calculated for uniform, triangular Gaussian-like donor distribution. The distribution differs from Gaussian other authors use. electronic structure of n-type Si δ-doped GaAs has been theoretically by solving Schrodinger Poisson equations self-consistently. Our results show that location size total depend on type. shape δ-effective potential profile subband properties changed as dependent model. Therefore, variation refraction changes, which can be appropriate various modulators infrared device applications smooth obtained alteration