Multiphonon‐relaxation processes in self‐organized InAs/GaAs quantum dots

摘要: We report on optical studies of relaxation processes in self‐organized InAs/GaAs quantum dots (QDs). Near resonant photoluminescence excitation spectra reveal a series sharp lines. Their energy with respect to the detection does not depend QD size and their separations are close InAs LO phonon 32.1 meV estimated for strained pyramidal QDs. The shape PLE is explained by multiphonon involving phonons as well wetting layer, an interface mode, low frequency acoustical phonons.