Electric currents in networks of interconnected memristors.

摘要: Chua [IEEE Trans. Circuit Theory 1, 507 (1971).] argued that, in addition to the standard resistors, capacitors, and inductors, there must be a fourth fundamental element electrical circuits, which he called memory resistor or memristor. Strukov et al. [Nature (London) 453, 80 (2008)] showed how memristive behavior arises some thin semiconducting films. Unlike other passive elements, however, memristor with large sizes cannot fabricated, because scale up of dimensions order microns causes loss effect by decreasing width doped region relative overall size A microscale is, essential most potential applications. One way fabricating such without losing is make network very small interconnected memristors. We report results numerical simulations currents networks memristors, as well memristors Ohmic conductors. The exhibit rich variety interesting properties, including weakly strongly regimes, possible first-order transition at connectivity threshold, generation second harmonics regime, universal dependence network's strength on frequency. Moreover, we show that polarity can play an important role properties network, particular its speed switching, may have potentially application faster computers. None these are exhibited linear networks, even nonlinear effect.