Resolving the VO 2 controversy: Mott mechanism dominates the insulator-to-metal transition

摘要: We consider a minimal model to investigate the metal-insulator transition in ${\mathrm{VO}}_{2}$. adopt Hubbard with two orbitals per unit cell, which captures competition between Mott and singlet-dimer localization. solve within dynamical mean-field theory, characterizing detail finding new features electronic states. compare our results available experimental data, obtaining good agreement relevant parameter range. Crucially, we can account for puzzling optical conductivity data obtained hysteresis region, associate metallic state characterized by split heavy quasiparticle band. Our show that thermal-driven insulator-to-metal ${\mathrm{VO}}_{2}$ is compatible mechanism, providing fresh insight long-standing ``chicken-and-egg'' debate calling further research of ``Mottronics'' applications this system.