Epitaxial growth of Al films on modified AlAs(001) surfaces

摘要: In order to understand the physical principles which underlie formation of metal/semiconductor interfaces, epitaxial Al films are grown by molecular beam epitaxy on As‐stabilized and Al‐stabilized AlAs(001) surfaces some were coated with a single monolayer (1 ML) Ga or In. Reflection high‐energy electron diffraction x‐ray measurements reveal that growth direction relationship drastically changed surface modification 1 ML A variety film configurations obtained, Al(001)/Ga(or In)/AlAs(001) heterostructure is technologically important because it has an ideally lattice matched heterostructure. We propose structural models for three phases, i.e., Al(001) two kinds Al(110), discuss origin variation phases. It shown changes observed in relationships can be systematically explained terms bond strengths at interface. metals semiconductors, interface effective controlling growth.