Impact of oxygen composition of ZnO metal-oxide on unipolar resistive switching characteristics of Al/ZnO/Al resistive RAM (RRAM)
作者： Cheng-Li Lin , Chi-Chang Tang , Shu-Ching Wu , Pi-Chun Juan , Tsung-Kuei Kang
DOI: 10.1016/J.MEE.2015.03.027
关键词:
摘要: Display Omitted Effect of oxygen content on electrical performance ZnO RRAM.Demonstrate the optimal in film for RRAM application.Propose resistance switching model at different content. This study investigates characteristics zinc oxide (ZnO) a resistive random-access memory (RAM) (RRAM) with aluminum as top and bottom electrodes. The effect is evaluated using O2/(Ar+O2) gas flow ratios 16%, 25%, 33%. From experimental results, RRAMs an oxygen-gas ratio 33% reveals lowest VRESET/VSET voltages, high (~107), but larger variation (or outlier) appears high-resistance state (HRS). In endurance testing, shows largest cycle than those 16% 25%. With respect to mechanism, slight amorphization, lower binding energy between (Zn) (O) atoms, number ions and/or vacancies are beneficial improving performance. summary, Al electrodes has VSET/VRESET voltages best endurance. Moreover, large magnitude margin (~102) HRS low (LRS).
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