Electronic properties of antidot lattices fabricated by atomic force lithography
作者： K. Ensslin , M. Bichler , T. Heinzel , W. Wegscheider , T. Ihn
DOI: 10.1063/1.1432767
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摘要: Antidot lattices were fabricated by atomic force lithography using local oxidation. High quality finite 20×20 are demonstrated with periods of 300 nm. The low-temperature magnetoresistance shows well developed commensurability oscillations as a quenching the Hall effect around zero magnetic field. In addition, we find B-periodic superimposed on classical peaks at temperatures high 1.7 K. These observations indicate electronic our samples.
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