Design of Anodic Aluminum Oxide Rear Surface Plasmonic Heterostructures for Light Trapping in Thin Silicon Solar Cells

摘要: A metal-dielectric heterostructure that provides the combined capability of light trapping and surface passivation is reported. The light-trapping layer employs a porous aluminum anodic oxide (AAO) with metal nanoparticles formed in pores on rear thin crystalline silicon solar cell. Numerical finite-difference time domain (FDTD) simulations were performed to determine pore diameter spacing would result optimal for this heterostructure. For 2.5-μm-thick device, determined be ~250 ~450 nm, respectively. These conditions resulted an enhancement simulated photocurrent by ~12.6% compared device which was replaced homogenous layer. Simulations also confirmed thickness underlying dielectric should minimized 10-20 AAO barrier being maintained as possible. Finally, it shown replacement silver reduction 6.3% necessitate much larger difficult achieve experimentally thicker layers, are undesirable.