Growth of bulk GaN single crystals by flux method
作者： X.L. Chen
DOI: 10.1016/J.STAM.2005.06.016
关键词:
摘要: … GaN crystals by the flux method … crystals up to a size of 4 mm can be grown from the Li–Ga–N system under pressures of 1–2 N2 atmospheres. The yield and quality of the GaN crystals …
harvard.edu
sci-hub.se 参考文章(26)
S. D. Lester, F. A. Ponce, M. G. Craford, D. A. Steigerwald, High dislocation densities in high efficiency GaN‐based light‐emitting diodes Applied Physics Letters. ,vol. 66, pp. 1249- 1251 ,(1995) , 10.1063/1.113252
A.V. Davydov, W.J. Boettinger, U.R. Kattner, T.J. Anderson, Thermodynamic Assessment of the Gallium–Nitrogen System Physica Status Solidi (a). ,vol. 188, pp. 407- 410 ,(2001) , 10.1002/1521-396X(200111)188:1<407::AID-PSSA407>3.0.CO;2-P
W.X. Yuan, W.J. Wang, Y.T. Song, X.L. Chen, Thermodynamic descriptions of the Ga–Li system Scripta Materialia. ,vol. 48, pp. 1053- 1059 ,(2003) , 10.1016/S1359-6462(02)00634-6
H. Morkoç, Comprehensive characterization of hydride VPE grown GaN layers and templates Materials Science & Engineering R-reports. ,vol. 33, pp. 135- 207 ,(2001) , 10.1016/S0927-796X(01)00031-6
Hiroshi Harima, Properties of GaN and related compounds studied by means of Raman scattering Journal of Physics: Condensed Matter. ,vol. 14, ,(2002) , 10.1088/0953-8984/14/38/201
S. Porowski, High pressure growth of GaN — new prospects for blue lasers Journal of Crystal Growth. ,vol. 166, pp. 583- 589 ,(1996) , 10.1016/0022-0248(96)00116-9
Shuji Nakamura, Masayuki Senoh, Shin-ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Hiroyuki Kiyoku, Yasunobu Sugimoto, InGaN-Based Multi-Quantum-Well-Structure Laser Diodes Japanese Journal of Applied Physics. ,vol. 35, pp. L74- L76 ,(1996) , 10.1143/JJAP.35.L74
E Veleckis, V.A Maroni, R.M Yonco, Solubility of nitrogen in liquid lithium and thermal decomposition of solid Li3N Journal of Nuclear Materials. ,vol. 57, pp. 317- 324 ,(1975) , 10.1016/0022-3115(75)90216-0
Shuji Nakamura, Takashi Mukai, Masayuki Senoh, Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes Applied Physics Letters. ,vol. 64, pp. 1687- 1689 ,(1994) , 10.1063/1.111832
Y.T. Song, X.L. Chen, W.J. Wang, W.X. Yuan, Y.G. Cao, X. Wu, Preparation and characterizations of bulk GaN crystals Journal of Crystal Growth. ,vol. 260, pp. 327- 330 ,(2004) , 10.1016/J.JCRYSGRO.2003.08.052