Effects of surface pretreatments on interface structure during formation of ultra-thin yttrium silicate dielectric films on silicon
作者： J.J. Chambers , B.W. Busch , W.H. Schulte , T. Gustafsson , E. Garfunkel
DOI: 10.1016/S0169-4332(01)00373-7
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摘要: Abstract X-ray photoelectron spectroscopy (XPS) and medium energy ion scattering (MEIS) are used to determine chemical bonding composition of ultra-thin films mixed yttrium, silicon, oxygen, formed by oxidation metal on clean pre-treated silicon. XPS MEIS analyses indicate that yttrium bare silicon results in a fully oxidized film with significant fraction Y–O–Si bonding. The structure from the relatively rapid reaction between Y Si substrate form silicide, followed oxidation. effect various pretreatments, including situ nitridation, bulk interface also examined. Transmission electron microscopy (TEM) 40 A thick indicates silicate amorphous uniform contrast throughout layer. shows evidence for graded concentration dielectric near interface, oxygen (consistent full oxidation) film. Angle resolved (ARXPS) no signal related Si+4, as would be expected substantial SiO2 Capacitance–voltage analysis demonstrates ∼10 A equivalent oxide thickness can achieved. effects oxide, nitrided-oxide nitrided interfaces consumption during investigated. When is deposited thin (∼10 A) oxidized, similar However, when nitride, rate significantly reduced, resulting closer Y2O3. shown occur vacuum annealing formation metal–silicon bonds suggests structures may important reactive intermediates silicon/dielectric reactions vapor deposition. In addition thermodynamic stability, understanding relative rates elementary steps critical control at dielectric/Si interface.
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