Plasma-Based Chemical Modification of Epitaxial Graphene

作者: Scott G Walton , Sandra C Hernández , Mira Baraket , Virginia D Wheeler , Luke O Nyakiti

DOI: 10.4028/WWW.SCIENTIFIC.NET/MSF.717-720.657

关键词:

摘要: In this work, the treatment of epitaxial graphene on SiC using electron beam generated plasmas produced in mixtures argon and oxygen is demonstrated. The imparts functional groups surface with concentrations ranging up to about 12 at.%, depending parameters. Surface characterization functionalized shows incorporation lattice by disruption ∏-bonds, an altering bulk electrical properties.

参考文章(18)
Duminda K. Samarakoon, Xiao-Qian Wang, Tunable band gap in hydrogenated bilayer graphene. ACS Nano. ,vol. 4, pp. 4126- 4130 ,(2010) , 10.1021/NN1007868
N.M Rodriguez, P.E Anderson, A Wootsch, U Wild, R Schlögl, Z Paál, XPS, EM, and Catalytic Studies of the Accumulation of Carbon on Pt Black Journal of Catalysis. ,vol. 197, pp. 365- 377 ,(2001) , 10.1006/JCAT.2000.3081
D. Marton, K. J. Boyd, T. Lytle, J. W. Rabalais, Near-threshold ion-induced defect production in graphite. Physical Review B. ,vol. 48, pp. 6757- 6766 ,(1993) , 10.1103/PHYSREVB.48.6757
S.G Walton, C Muratore, D Leonhardt, R.F Fernsler, D.D Blackwell, R.A Meger, Electron-Beam-Generated Plasmas for Materials Processing Surface & Coatings Technology. ,vol. 186, pp. 40- 46 ,(2004) , 10.1016/J.SURFCOAT.2004.04.007
M Wu, C Cao, J Z Jiang, Light non-metallic atom (B, N, O and F)-doped graphene: a first-principles study Nanotechnology. ,vol. 21, pp. 505202- 505202 ,(2010) , 10.1088/0957-4484/21/50/505202
Michael K. Yakes, Daniel Gunlycke, Joseph L. Tedesco, Paul M. Campbell, Rachael L. Myers-Ward, Charles R. Eddy, D. Kurt Gaskill, Paul E. Sheehan, Arnaldo R. Laracuente, Conductance anisotropy in epitaxial graphene sheets generated by substrate interactions. Nano Letters. ,vol. 10, pp. 1559- 1562 ,(2010) , 10.1021/NL9035302
M. Hundhausen, R. Püsche, J. Röhrl, L. Ley, Characterization of Defects in Silicon Carbide by Raman Spectroscopy Physica Status Solidi B-basic Solid State Physics. ,vol. 245, pp. 1356- 1368 ,(2008) , 10.1002/PSSB.200844052
D. A. Abanin, A. V. Shytov, L. S. Levitov, Peierls-type instability and tunable band gap in functionalized graphene. Physical Review Letters. ,vol. 105, pp. 086802- ,(2010) , 10.1103/PHYSREVLETT.105.086802
Jennifer K. Hite, Mark E. Twigg, Joseph L. Tedesco, Adam L. Friedman, Rachael L. Myers-Ward, Charles R. Eddy, D. Kurt Gaskill, Epitaxial Graphene Nucleation on C-Face Silicon Carbide Nano Letters. ,vol. 11, pp. 1190- 1194 ,(2011) , 10.1021/NL104072Y
Glenn G. Jernigan, Brenda L. VanMil, Joseph L. Tedesco, Joseph G. Tischler, Evan R. Glaser, Anthony Davidson, Paul M. Campbell, D. Kurt Gaskill, Comparison of epitaxial graphene on Si-face and C-face 4H SiC formed by ultrahigh vacuum and RF furnace production. Nano Letters. ,vol. 9, pp. 2605- 2609 ,(2009) , 10.1021/NL900803Z