Raman spectroscopy at III–V semiconductor surfaces and overlayers in the monolayer region
作者： Jean Geurts
DOI: 10.1007/BFB0107866
关键词:
摘要: The application of Raman spectroscopy is discussed for the analysis different aspects III–V semiconductor surfaces and interfaces, such as chemical reactivity, overlayer crystallinity electronic band bending. interface reactivity studied CdTe/InSb InSb/Sb. Overlayer bending are analyzed Sb layers on GaAs InP. Here submonolayer sensitivity achieved ordered chains in first monolayer (ML). Furthermore, crystalline states thicker overlayers detected. development substrate monitored by Electric Field Induced Scattering (EFIRS) from LO phonon coverages up to about 100 ML. Considerable dynamics observed thicknesses far beyond 1
springer.com
harvard.edu
sci-hub.se 参考文章(27)
Gerhard Abstreiter, Manuel Cardona, Aron Pinczuk, Light scattering by free carrier excitations in semiconductors Light Scattering in Solids IV: Electronics Scattering, Spin Effects, SERS, and Morphic Effects. ,vol. 54, pp. 5- 150 ,(1984) , 10.1007/3-540-11942-6_20
Winfried Mönch, On the Present Understanding of Schottky Contacts Advances in Solid State Physics. ,vol. 26, pp. 67- 88 ,(1986) , 10.1007/BFB0107792
Light Scattering in Solids VII lss4. ,vol. 54, ,(1982) , 10.1007/3-540-11942-6
P. Wickboldt, E. Anastassakis, R. Sauer, M. Cardona, Raman phonon piezospectroscopy in GaAs: Infrared measurements Physical Review B. ,vol. 35, pp. 1362- 1368 ,(1987) , 10.1103/PHYSREVB.35.1362
Perry Skeath, C. Y. Su, W. A. Harrison, I. Lindau, W. E. Spicer, Bonding of antimony on GaAs(110): A prototypical system for adsorption of column-V elements on III-V compounds Physical Review B. ,vol. 27, pp. 6246- 6262 ,(1983) , 10.1103/PHYSREVB.27.6246
K.J. Mackey, P.M.G. Allen, W.G. Herrenden-Harker, R.H. Williams, Semiconductor-semiconductor heterojunctions; The application of surface science techniques to study InSbCdTe surfaces and their interfaces Surface Science. ,vol. 178, pp. 124- 130 ,(1986) , 10.1016/0039-6028(86)90287-6
A. Pinczuk, E. Burstein, Raman Scattering from InSb Surfaces at Photon Energies Near the E 1 Energy Gap Physical Review Letters. ,vol. 21, pp. 1073- 1075 ,(1968) , 10.1103/PHYSREVLETT.21.1073
W. Pletschen, N. Esser, H. Münder, D. Zahn, J. Geurts, W. Richter, Sb overlayers on GaAs(110) Surface Science. ,vol. 178, pp. 140- 148 ,(1986) , 10.1016/0039-6028(86)90289-X
J. Finders, J. Geurts, A. Kohl, M. Weyers, B. Opitz, O. Kayser, P. Balk, Composition of selectively grown InxGa1−xAs structures from locally resolved Raman spectroscopy Journal of Crystal Growth. ,vol. 107, pp. 151- 155 ,(1991) , 10.1016/0022-0248(91)90448-E
P. Mårtensson, R. M. Feenstra, Geometric and electronic structure of antimony on the GaAs(110) surface studied by scanning tunneling microscopy Physical Review B. ,vol. 39, pp. 7744- 7753 ,(1989) , 10.1103/PHYSREVB.39.7744