Mn Diffusion and Reactive Diffusion in Ge: Spintronic Applications

摘要: In this paper, we report investigations concerning the fabrication of a diluted Ge (Mn) solution using solid state Mn diffusion, and Mn/Ge reactive diffusion for spintronic applications. The study shows that quasi-totality incorporated atoms occupies substitutional sites probably exhibits two negative elementary charges. solubility limit in is comprised between 0.7 0.9 % (T  600 °C). We show are not ferromagnetic consequently magnetic semiconductor can be produced. Beside signal from Mn5Ge3, signals detected samples could always attributed to surface or bulk Mn-Ge clusters. Furthermore, CMOS Salicide process potentially applicable Mn5Ge3 nanolayer on During (thin-film)/Ge reaction, first phase form, being thermally stable up 310 °C exhibiting properties TC ~ 300 K.