Conductance Modulation Techniques in Switched-Capacitor DC-DC Converter for Maximum-Efficiency Tracking and Ripple Mitigation in 22 nm Tri-Gate CMOS
作者： Rinkle Jain , Stephen T. Kim , Vaibhav Vaidya , Krishnan Ravichandran , James W. Tschanz
DOI: 10.1109/JSSC.2015.2413952
关键词:
摘要: Switch conductance modulation techniques are demonstrated in a fully integrated multi-ratio switched-capacitor voltage regulator with hysteretic control, 22 nm tri-gate CMOS high-density MIM capacitor. We present (i) an adaptive switch-size scaling scheme for maximum efficiency tracking across wide range of voltages and currents, governed by frequency-based control law that is experimentally validated multiple dies temperatures and, (ii) simple active ripple mitigation technique modulates the gate drive select MOSFET switches effectively all conversion modes. Efficiency improvements up to 15% measured under low output load conditions. Load-independent $ 50 mV achieved, enabling reduced interleaving. Test chip implementations measurements demonstrate ease integration SoC designs, power benefits EMI/RFI improvements.
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