The Dependence of the Photomagnetoelectric Effect on the Angle of Incidence of Radiation
作者： M. Nowak
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摘要: The theory of the PME effect is extended for case non-normal incidence radiation into a semiconductor covered with non-absorbing surface film. Numerical analyses performed typical parameters are presented. polarization and angular dependence methods investigation proposed determining film parameters. results investigations on p-Si natural oxide reported. [Russian Text Ignored].
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