Direct observation of carrier depletion around a dislocation in GaP by scanning spreading resistance microscopy
作者： T. Yokoyama , R. Takenaka , Y. Kamimura , K. Edagawa , I. Yonenaga
DOI: 10.1063/1.3266926
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摘要: The local electrical resistivities in deformed n-GaP have been measured by scanning spreading resistance microscopy (SSRM). SSRM images show chainlike alignments of spots with high resistivity along the slip direction. These can be attributed to carrier-depletion around a charged dislocation. From observed spot size, line charge density dislocations has estimated 0.4–0.9e/b, where b denotes magnitude Burgers vector. value discussed relation dislocation core structure.
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Hiroki Hasegawa, Yasushi Kamimura, Keiichi Edagawa, Ichiro Yonenaga, Dislocation-related optical absorption in plastically deformed GaN Journal of Applied Physics. ,vol. 102, pp. 026103- ,(2007) , 10.1063/1.2756074
J. Cai, F.A. Ponce, Determination by Electron Holography of the Electronic Charge Distribution at Threading Dislocations in Epitaxial GaN Physica Status Solidi (a). ,vol. 192, pp. 407- 411 ,(2002) , 10.1002/1521-396X(200208)192:2<407::AID-PSSA407>3.0.CO;2-M
Ph Ebert, L Ivanova, S Borisova, H Eisele, A Laubsch, M Dähne, None, Electronic properties of dislocations in GaN investigated by scanning tunneling microscopy Applied Physics Letters. ,vol. 94, pp. 062104- ,(2009) , 10.1063/1.3073741
A. K. Sarkar, S. Sengupta, Many Body Interaction in Alkali Halides Physica Status Solidi B-basic Solid State Physics. ,vol. 36, pp. 359- 364 ,(1969) , 10.1002/PSSB.19690360137
C. Elbaum, Pseudo-One-Dimensional Conductor-Plastically Deformed CdS Physical Review Letters. ,vol. 32, pp. 376- 379 ,(1974) , 10.1103/PHYSREVLETT.32.376
Y. Mera, K. Maeda, S. Hyodo, Microscopic Origin of Electric Conduction Anisotropy in Plastically Deformed CdS Single Crystals Physica Status Solidi (a). ,vol. 111, pp. 223- 232 ,(1989) , 10.1002/PSSA.2211110123
D. Vignaud, J. L. Farvacque, Dislocation energy bands in GaAs: An optical absorption study Journal of Applied Physics. ,vol. 67, pp. 281- 286 ,(1990) , 10.1063/1.345249
D. Cherns, C. G. Jiao, Electron holography studies of the charge on dislocations in GaN. Physical Review Letters. ,vol. 87, pp. 205504- ,(2001) , 10.1103/PHYSREVLETT.87.205504
P. J. Hansen, Y. E. Strausser, A. N. Erickson, E. J. Tarsa, P. Kozodoy, E. G. Brazel, J. P. Ibbetson, U. Mishra, V. Narayanamurti, S. P. DenBaars, J. S. Speck, Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition Applied Physics Letters. ,vol. 72, pp. 2247- 2249 ,(1998) , 10.1063/1.121268
E. Müller, D. Gerthsen, P. Brückner, F. Scholz, Th. Gruber, A. Waag, Probing the electrostatic potential of charged dislocations in n-GaN and n-ZnO epilayers by transmission electron holography Physical Review B. ,vol. 73, pp. 245316- ,(2006) , 10.1103/PHYSREVB.73.245316