作者: Peng Wang , Xiaoqiang Li , Zhijuan Xu , Zhiqian Wu , Shengjiao Zhang
DOI: 10.1016/J.NANOEN.2015.03.023
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摘要: Abstract Graphene based van der Waals heterostructure has attracted wide attention recently, especially for graphene/semiconductor Schottky junction. Herein, through delicately designing and engineering the between graphene indium phosphide (InP), which a suitable bandgap of 1.34 eV solar energy conversion, we have achieved graphene/p-InP cells with power conversion efficiency (PCE) 3.3% under AM 1.5G illumination. The chemical doping or electrical field modulation been used to tune Fermi level graphene, leads PCE 5.6% device gating effect. Furthermore, interface recombination rate could be reduced while is doped gated, as evidenced by transient photoluminescence measurements. Considering stability cell performance illumination high resistance space irradiation damage InP, graphene/InP heterojunction may promising special applications such cells.