Clarification of difference for transition between photoluminescence and cathode-luminescence based on GaMnN

摘要: Abstract GaN:Mn epilayers were grown on Al 2 O 3 substrate uisng molecular beam epitaxy (MBE) and subsequently implanted with Mn + ions (1% 10%). Photoluminescence (PL) 1% of showed that optical transitions related to revealed the donor-Mn pair (D, Mn) at 2.5 eV electron-Mn (e, around 3.1 eV, yellow luminescence (YL) 2.20–2.25 eV. 10% same but enhanced as above. However, new 1.65 eV for sample which did not appeared very weakly produced. The results cathode-luminescence (CL) in PL together 1.72 eV. 1.72 eV according high accelerating voltage remarkably activated contrast produced samples 10%. Transitions CL correspond though PL. This result means deep donor (probably, V N ) is detected increasing Mn–V complex formed. supported by strong electron sensitivity IR emission bands. It well known heavy doping (>∼10 19  C m −3 leads a downshift Fermi level promotes formation defect complexes . In our case, concentration >∼10 21 Therefore, it conjectured transition corresponds complex.