Methods of forming a transistor gate

摘要: A method of forming a transistor gate includes oxide layer over semiconductive substrate. Chlorine is provided within the layer. formed proximate In another method, and are in overlapping relation, with having opposing edges center therebetween. At least one chlorine or fluorine concentrated overlap more at than center. Preferably, central region substantially undoped chlorine. The and/or can be by sidewall spacers lateral gate, comprising fluorine. annealed temperature for time effective to diffuse into beneath gate. Transistors gates fabricated according above other methods disclosed. Further, material positioned source laterally drain edges. First insulative edges, first being doped Second spacers.