Reply to the comment on `Monte Carlo simulations of the recombination dynamics in porous silicon'
作者： H Eduardo Roman , Lorenzo Pavesi
DOI: 10.1088/0953-8984/10/6/028
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摘要: The role of diffusion charge carriers in radiative recombination processes for porous silicon is discussed. conducting material modelled on a lattice which each occupied site represents an Si crystal nanometre size. To describe the dynamics particles and holes, two extreme situations are considered: one electron hole diffuse as single entity (exciton-like motion) second they independently other (two-species motion). In both cases excitonic takes place site. present results compared with theoretical approaches, originally developed describing photoluminescence hydrogenated amorphous (a-Si:H).
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