Structural and electrical characteristics of GaN, n-GaN and A1 x Ga 1−x N
作者： P. Arivazhagan , R. Ramesh , Ramadoss Roop Kumar , Eric Faulques , Fouad Bennis
DOI: 10.1016/J.JALLCOM.2015.09.102
关键词:
摘要: Abstract GaN, n-GaN (n∼ 1 × 10 18 /cm 3 ) and Al x Ga 1−x N (x = 0. 14, 0.26, 0.45) were epitaxially grown by metal organic chemical vapor deposition (MOCVD) on c-plane sapphire substrate. The composition thickness of 1-x layers found employing ω-2θ scan with simulation fit. dislocation densities epilayers determined from symmetric asymmetric planes ω-scan rocking curve. (105) plane reciprocal space mapping was employed to measure the in-plane strain (e xx GaN. GaN calculated 2θ scan. second derivative capacitance AFM tip-sample system using electrostatic force microscopy (EFM). Photon decay time measured resolved photoluminescence results correlated structural property epilayers. Schottky behavior Ni/Au contacts studied current–voltage (I–V) measurements. barrier height each device compared edge density layers.
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