Irradiation of MIS Capacitors with High Energy Electrons
作者： K. H. Zaininger
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摘要: High-energy electron bombardment of Me-SiO2-Si and Me-Si3N4-Si capacitors has been investigated by means C-V G-V measurements. The usually results in the introduction positive charge into insulator. This effect is explained a physical model which involves interaction secondary electrons with insulator lattice to generate electron-hole pairs predominant trapping holes Dependence radiation sensitivity on initial surface state density, gate thickness, oxidation procedure, orientation, bias, previous history, as well annealing behavior was studied.
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