Optical injection of spin-polarized carriers across a strongly mismatched heterostructure
作者： M. Ghali , J. Kossut , E. Janik , K. Regiński , Ł. Kłopotowski
DOI: 10.1016/S0038-1098(01)00253-8
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摘要: Abstract We observed an effective injection of spin-polarized carriers from II–VI Zn 0.97 Mn 0.03 Te diluted magnetic semiconductor spin aligning layer into III–V-based, GaAs-based quantum well structure. By using circular polarized excitation and detection, we demonstrate that the indeed proceeds through II–VI/III–V interface in spite a huge lattice mismatch (∼7.8%) which is decorated by great number dislocations. This indicates spins are quite robust maintain their polarization memory even after passing dense array misfit
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