Simulating equilibrium processes in the Ga(NO3)3–H2O–NaOH system
作者： E. A. Fedorova , S. A. Bakhteev , L. N. Maskaeva , R. A. Yusupov , V. F. Markov
DOI: 10.1134/S0036024416060078
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摘要: Equilibrium processes in the Ga(NO3)3–H2O–NaOH system are simulated with allowance for formation of precipitates various compositions using experimental data from potentiometric titration and theoretical studies. The values instability constants calculated along stoichiometric resulting compounds. It is found that pH ranges 1.0 to 4.3 12.0 14.0 best deposition gallium chalcogenide films.
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