Si/Δ layer in GaAs(001): Its effect on the crystal structure and roughness of the GaAs cap layer
作者： Norene Lucas , Hartmut Zabel , Hadis Morkoç
DOI: 10.1063/1.365802
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摘要: We have investigated structural properties of GaAs grown on top a pseudomorphic Si interlayer deposited substrate by x-ray reflectivity and Bragg scattering. The surface interface roughness the 500-A thick overlayer depends critically thickness interlayer. increases from roughly 10 to 40 A when thicknesses 3 5 A, whereas remains constant for larger than 9 A. Laue oscillation GaAs(004) reflection together with asymmetry intensity allow precise determination
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Zhe Chuan Feng, Semiconductor Interfaces, Microstructures and Devices: Properties and applications ,(1993)
S. Strite, M.E. Lin, H. Morkoç, Progress and prospects for GaN and the III–V nitride semiconductors Thin Solid Films. ,vol. 231, pp. 197- 210 ,(1993) , 10.1016/0040-6090(93)90713-Y
K. Adomi, S. Strite, H. Morkoç, Y. Nakamura, N. Otsuka, Characterization of GaAs grown on Si epitaxial layers on GaAs substrates Journal of Applied Physics. ,vol. 69, pp. 220- 225 ,(1991) , 10.1063/1.347754
R. G. Dandrea, C. B. Duke, Strain-induced interdiffusion at semiconductor interfaces. Physical Review B. ,vol. 45, pp. 14065- 14068 ,(1992) , 10.1103/PHYSREVB.45.14065
R. D. Bringans, R. I. G. Uhrberg, R. Z. Bachrach, John E. Northrup, Arsenic-terminated Ge(111): An ideal 1×1 surface Physical Review Letters. ,vol. 55, pp. 533- 536 ,(1985) , 10.1103/PHYSREVLETT.55.533
I. K. Robinson, R. T. Tung, R. Feidenhans'l, X-ray interference method for studying interface structures. Physical Review B. ,vol. 38, pp. 3632- 3635 ,(1988) , 10.1103/PHYSREVB.38.3632
N Lucas, H Zabel, H Morkoc, H Unlu, None, Anisotropy of thermal expansion of GaAs on Si(001) Applied Physics Letters. ,vol. 52, pp. 2117- 2119 ,(1988) , 10.1063/1.99553
L. Névot, P. Croce, Caractérisation des surfaces par réflexion rasante de rayons X. Application à l'étude du polissage de quelques verres silicates Revue de Physique Appliquée. ,vol. 15, pp. 761- 779 ,(1980) , 10.1051/RPHYSAP:01980001503076100
K. Adomi, S. Strite, H. Morkoç, Antiphase‐domain‐free GaAs grown on pseudomorphic Si (100) surfaces by molecular beam epitaxy Applied Physics Letters. ,vol. 56, pp. 469- 471 ,(1990) , 10.1063/1.102768
R. Fischer, H. Morkoç, D. A. Neumann, H. Zabel, C. Choi, N. Otsuka, M. Longerbone, L. P. Erickson, Material properties of high‐quality GaAs epitaxial layers grown on Si substrates Journal of Applied Physics. ,vol. 60, pp. 1640- 1647 ,(1986) , 10.1063/1.337253