作者: B. R. Lee , K. H. Kim , T. H. Lee , T. G. Kim
DOI: 10.1109/CLEOPR.2015.7376029
关键词:
摘要: We present an electroforming transparent conductive electrode that enables current injection from metal to semiconductor, by forming conducting filaments (CFs) in wide-bandgap materials such as silicon nitride, and employ it n-type for GaN-based vertical light-emitting diodes investigate the effect of CF densities on electrical optical characteristics VLEDs.