Ultrahigh vacuum preparation and characterization of TiO2/CdTe interfaces: Electrical properties and implications for solar cells
作者： S. Tiefenbacher , C. Pettenkofer , W. Jaegermann
DOI: 10.1063/1.1435413
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摘要: The semiconductor cadmium telluride (CdTe) has been grown in ultrahigh vacuum by standard molecular beam epitaxy on thin films of anatase titanium dioxide (TiO2) to investigate the interface properties solid state injection type solar cells. These interfaces were studied photoelectron spectroscopy and band alignment was determined. is characterized a valence offset ΔEV 2.6 eV, conduction ΔEC 0.7 strong dipole δ about 0.9 eV contradiction electron affinity rule (Anderson model). Therefore this system not very favorable for power generation.
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