Formation of subsurface Al 2O 3 layers in aluminum by oxygen ion implantation
作者： R.G. Musket , D.W. Brown , H.C. Hayden
DOI: 10.1016/0168-583X(85)90525-7
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摘要: Abstract The use of high-dose oxygen ion implants to create buried, insulating SiO 2 layers in silicon has been reported by many groups. In contrast, only a few groups have studied ion-implanted oxide on and aluminum films. We investigated the formation subsurface Al O 3 bulk, polycrystalline aluminum. particular, we implanted (1–16) × 10 17 atoms cm −2 using low current densities 180 keV + near room temperature. Depth distributions were determined both Auger-electron spectroscopy combined with argon-ion sputtering helium-ion backscattering. For fluences greater than about 8 our analyses revealed formed thicknesses that increased dose. results those from film literature propose process.
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