Preparation condition and recombination rates at radiative defects in a-Si:H1
作者： Chisato Ogihara , Yuta Shintoku , Kei Yamaguchi , Kazuo Morigaki
关键词:
摘要: Recombination rates at radiative defects in the hydrogenated amorphous silicon films prepared various preparation conditions, estimated from intensities and characteristic lifetimes of defect photoluminescence, have been investigated. The temperature variations recombination rate are discussed terms a model which increase is attributed to thermal excitation holes deep strongly localised tail states shallow more extended states. nonradiative theory for case strong electron–phonon coupling.
harvard.edu
nrcresearchpress.com参考文章(7)
C. Ogihara, K. Morigaki, Temperature variation of non-radiative recombination rate in a-Si:H films Physica Status Solidi (c). ,vol. 9, pp. 2574- 2577 ,(2012) , 10.1002/PSSC.201200199
C. Ogihara, Y. Inagaki, K. Morigaki, Light-induced effects on the radiative recombination rate of electron-hole pairs in a-Si:H physica status solidi (c). ,vol. 8, pp. 2792- 2795 ,(2011) , 10.1002/PSSC.201084056
A. H. M. Smets, M. C. M. van de Sanden, Relation of the Si-H stretching frequency to the nanostructural Si-H bulk environment Physical Review B. ,vol. 76, pp. 073202- ,(2007) , 10.1103/PHYSREVB.76.073202
Robert Englman, Joshua Jortner, The energy gap law for radiationless transitions in large molecules Molecular Physics. ,vol. 18, pp. 145- 164 ,(1970) , 10.1080/00268977000100171
J. I. Pankove, J. E. Berkeyheiser, Light‐induced radiative recombination centers in hydrogenated amorphous silicon Applied Physics Letters. ,vol. 37, pp. 705- 706 ,(1980) , 10.1063/1.92052
C. Ogihara, Y. Inagaki, A. Taketa, K. Morigaki, Thermal quenching of defect photoluminescence and recombination rates of electron–hole pairs in a-Si:H Journal of Non-crystalline Solids. ,vol. 358, pp. 2004- 2006 ,(2012) , 10.1016/J.JNONCRYSOL.2011.12.086
C. Ogihara, K. Morigaki, Temperature variation of radiative recombination rate of electron‐hole pairs responsible for defect photoluminescence in a‐Si:H Physica Status Solidi (c). ,vol. 6, ,(2009) , 10.1002/PSSC.200881329