Forcing stuck bits, waterfall bits, shunt bits and low TMR bits to short during testing and using on-the-fly bit failure detection and bit redundancy remapping techniques to correct them

摘要: A method for correcting bit defects in a memory array is disclosed. The comprises determining, during characterization stage, resistance distribution the by classifying state of each bit-cell array, wherein plurality codewords, codeword redundant bits. Further, determining bit-cells that are ambiguous, ambiguous have resistances between being high or low Subsequently, forcing to short circuits and replacing short-circuited with corresponding from an associated codeword.