Contactless technique for semicondutor wafer testing

摘要: A contactless technique for semiconductor wafer testing comprising: depositing charges on the top surface of an insulator layer over to create inverted with a depletion region and thereby field-induced junction therebelow in wafer, accumulated guard ring therearound. The further includes step changing depth which extends below potential transient, measuring parameter resultant transient. This may be utilized make time retention epi doping concentration measurements. It is especially advantageous reducing effects leakage these In preferred embodiment, corona discharges are used effect charge deposition configuration. Either discharge or photon injection change depth.