High-performance transparent and flexible inorganic thin film transistors: a facile integration of graphene nanosheets and amorphous InGaZnO

摘要: Transparent and flexible thin film transistors (TFTs) with high performance based on solution processed graphene nanosheets (GNSs)–amorphous indium–gallium–zinc-oxide (a-IGZO) composites have been developed. A electron mobility of 23.8 cm2 V−1 s−1 has achieved, which is about thirty times higher than those the pristine a-IGZO TFTs (0.82 s−1) hydrogenated amorphous silicon (<1 s−1). The on/off current ratio remains in a order 106 demonstrating sustainability TFT devices. In addition, transparent GNSs–a-IGZO Ta2O5 dielectric layer show superior resistance to mechanical bending variation only 8% after 100 repeated cyclic compared degradation more 70% for device. Our results demonstrate that GNSs not play an important role forming conducting network active matrix, but also enhance stability composites. It therefore paves key step develop large-scale applications next-generation electronics.