Device applications of epitaxial graphene on silicon carbide

作者: M. Beshkova , L. Hultman , R. Yakimova

DOI: 10.1016/J.VACUUM.2016.03.027

关键词:

摘要: … insulating or conducting) substrate ready for device processing. Here, we present a review of the major current explorations of graphene on SiC in electronic devices, such as field effect …

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