Laser-induced damage threshold of silicon under combined millisecond and nanosecond laser irradiation
作者： Xueming Lv , Yunxiang Pan , Zhichao Jia , Zewen Li , Hongchao Zhang
DOI: 10.1063/1.4978379
关键词:
摘要: The laser–silicon interaction process was investigated with the superposed radiation of two pulsed Nd:YAG lasers. A pulse duration 1 millisecond (ms) by 7 nanosecond (ns) pulses, creating a combined laser (CPL). time-resolved surface temperature silicon measured an infrared pyrometer. melting thresholds were attained for single ms and CPL radiometry reflectance. concept threshold boundary proposed, fitted curve obtained. An axisymmetric model established heating silicon. transient fields obtained irradiation using finite element analysis. numerical results validated experimentally, obvious decrease in found under irradiation. That is attributed to pre-heating damage caused ns laser.
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