作者: W. Wang , Q. X. Zhu , M. M. Yang , R. K. Zheng , X. M. Li
DOI: 10.1007/S10854-014-1819-0
关键词:
摘要: We have investigated the effects of oxygen pressure on microstructure, leakage current, ferroelectric and magnetic properties BiFe0.95Mn0.05O3 (BFMO) thin films epitaxially grown SrRuO3, SrTiO3, TiN-buffered (001)-oriented Si substrates. X-ray diffraction θ−2θ scans scanning electron microscope images reveal that epitaxy microstructures BFMO were strongly dependent during film deposition. Epitaxial can be obtained in a low 2 Pa while polycrystalline relatively high 15 Pa. Furthermore, influences Si. The remnant polarization (2Pr) approximately 107 μC/cm2 coercive field (2Ec) 580 kV/cm observed for epitaxial saturation magnetization decreases with increasing remains unchanged.