Microstructure studies of AuNiGe Ohmic contacts to n-type GaAs

摘要: Microstructure analysis and contact resistance measurements of alloyed AuNiGe contacts to GaAs were performed assist in the development low Ohmic for metal–semiconductor field‐effect transistor (MESFET) devices. The metals prepared by sequential deposition 100 nm Au–27 at. % Ge, 35 Ni, 50 Au onto sputter‐cleaned wafers which conducting channels formed Si doping a level about 1×1018 cm−3. resistances determined transmission line method. Analysis substrate film microstructure was carried out x‐ray diffraction, Auger electron spectroscopy (AES), photoelectron (XPS). A strong correlation between observed. Low observed when NiAs compounds containing Ge with β‐AuGa phase concentrated near top contact. High measured free Au, α‐AuGa p...