Method of fabricating electrically erasable read only memory cell

摘要: An EPROM cell on a semiconductor substrate having trench containing source region in the bottom thereof, insulated floating gates opposite sidewalls of trench, and control gate overlying gates. Drain regions are provided beneath top surface substrate, adjacent to gates, which electrically connected by conductive stripe that extends transverse axis. A method fabricating an forming substrate. polycrystalline silicon is formed trench. Doped bottom. over gate. Electrical contact established doped