作者: Lan Cheng , Jürgen Gauss
DOI: 10.1063/1.3601056
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摘要: We report an analytical scheme for the calculation of first-order electrical properties using spin-free Dirac-Coulomb (SFDC) Hamiltonian, thereby exploiting well-developed density-matrix formulations in nonrelativistic coupled-cluster (CC) derivative theory. Orbital relaxation effects are fully accounted by including correlated orbitals with respect to all types, viz., frozen-core, occupied, virtual, and negative energy state orbitals. To demonstrate applicability presented scheme, we benchmark calculations hydrogen halides, HX X = F, Cl, Br, I, At, a first application iodo(fluoro)methanes, CHnF3 − nI, n 0–3. The results obtained from SFDC compared those calculations, via leading-order direct perturbation theory as well full calculations. It is shown that inclusion (SF) re...